Method for fabricating semiconductor device and etchant for polymer resin
US4113550A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 11, 1976 |
| Grant date | Sep 12, 1978 |
| Priority date | — |
| Expiry date | Jun 11, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/0017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device fabricated by forming a layer of semicured polyimide resin on a semiconductor body, forming a photoresist layer having a prescribed pattern on said semicured layer, immersing in an etchant consisting of hydrazine and ethylenediamine to said semicured layer through said prescribed pattern, whereby said semicured layer is precisely etched according to said prescribed pattern and prescribed surfaces of said semiconductor body are exposed, curing said semicured polyimide so as to form a layer of said polyimide resin, forming a metal layer on the surface of said polyimide and the prescribed surfaces of said body, and selectively etching said metal layer so as to form a prescribed pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.