Polycrystalline silicon etching with tetramethylammonium hydroxide
US4113551A · kind A · utility
33Cited by
4References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1977 |
| Grant date | Sep 12, 1978 |
| Priority date | — |
| Expiry date | Dec 16, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A family of etchants for polycrystalline silicon based upon an aqueous solution of NR.sub.4 OH, where R is an alkyl group, has a relatively low etching rate enabling the exercise of better control over the delineation of fine structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.