Sputtering technique for the deposition of indium oxide
US4113599A · kind A · utility
34Cited by
2References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 26, 1977 |
| Grant date | Sep 12, 1978 |
| Priority date | — |
| Expiry date | Sep 26, 1997 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/155
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Consistent properties for indium oxide films deposited by cathode sputtering over a wide range of outgassing conditions are obtained by adjusting the flow rate of oxygen to maintain a constant discharge current while adjusting the flow rate of argon to maintain a constant pressure in the sputtering chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.