Semiconductor controlled rectifier having an auxiliary region with localized low resistance paths to the control gate
US4114178A · kind A · utility
4Cited by
7References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 27, 1976 |
| Grant date | Sep 12, 1978 |
| Priority date | — |
| Expiry date | Jan 27, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/221
Abstract
A semiconductor controlled rectifier comprising a semiconductor substrate consisting of four layers doped alternately with p- and n-type impurities, a pair of main electrodes kept in ohmic contact with the outermost p- and n-type layers, an N auxiliary region in the intermediate p-type layer with an auxiliary contact thereto, and a gate electrode in contact with the intermediate p-type layer, wherein a portion of the gate electrode is disposed adjacent to the auxiliary region, where there are localized regions forming low resistance paths between the gate electrode and the auxiliary electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.