Patent · US Expired

Method for manufacture of a semiconductor device

US4114254A · kind A · utility

12Cited by

1References

10Claims

0Family size

Assignee

SONY GROUP CORPORATION · JP

Inventors

Teruaki Aoki · Tokyo, JP
Motoaki Abe

Key dates

Filing date	Mar 22, 1976
Grant date	Sep 19, 1978
Priority date	—
Expiry date	Mar 22, 1996

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/945
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and method of making the same is disclosed having a surface passivation film of a polycrystalline silicon layer containing 2 to 45 atomic percent of oxygen atoms. The polycrystalline silicon layer is locally electrically insulated by oxidizing throughout the thickness of the layer. The local oxidizing treatment causes the polycrystalline or silicon layer to pattern.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.