Patent · US Expired

Method of producing optoelectronic devices with control of light propagation

US4115150A · kind A · utility

7Cited by
1References
2Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 7, 1977
Grant dateSep 19, 1978
Priority date
Expiry dateFeb 7, 1997

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S148/084
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

In an optoelectronic device, light is restrained from propagating in one or both confining layers on either side of an active layer by forming one or more photonabsorbing barriers in one, or both, confining layers. A photon absorbing barrier can be formed by proton bombardment of a confining layer, by producing a protrusion from the substrate into the adjacent confining layer, or by producing a protrusion from a capping layer into the other confining layer, or by combinations of these. Spaced apart barriers can define a device, or sections of a multi-sectioned device, for example a monolithic light emitting diode and modulator.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.