Two-sided planar magnetron sputtering apparatus
US4116806A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 1977 |
| Grant date | Sep 26, 1978 |
| Priority date | — |
| Expiry date | Dec 8, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3497
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Apparatus for depositing layers of materials onto substrates by magnetically enhanced cathodic sputtering; typically comprising an enclosure having atmospheric sealing means between the atmosphere inside and the atmosphere outside the enclosure, vacuum pump means connected to the enclosure to reduce the pressure inside relative to the atmospheric pressure outside the enclosure, a cathode within the enclosure comprising a frame of substantially symmetric shape about a centrally disposed centerplane, a plurality of magnets supported in the frame and positioned with the neutral axis of each magnet substantially in the centerplane, and at least one target plate supported on the frame on each side of the centerplane, insulation means between the frame and the enclosure, means for connecting an electrical potential difference between the frame and the enclosure, and means in and supported by the enclosure for supporting and conveying the substrates on opposite sides of, and parallel to, the target plates from a position on one side to a position on the other side of the cathode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.