Semiconductor injection laser
US4121179A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 3, 1977 |
| Grant date | Oct 17, 1978 |
| Priority date | — |
| Expiry date | Jan 3, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor injection laser device has a heterostructure wherein either of a p-layer and an n-layer which hold a lasing active layer therebetween is a semiconductor layer which has an energy band gap greater than that of the active layer, and the semiconductor injection laser device includes one of the semiconductor layers that adjoins the active layer being constructed of a semiconductor layer which has a stripe mesa portion and whose base part is 0.8.mu. to 1.5.mu. thick. The semiconductor injection laser device of this construction has a current injection region width limited by the width of the stripe mesa portion. As a result, not only a current flowing into the device can be made small, but also the device can be lased in a single mode of the lowest order with transverse modes of higher orders reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.