Metal oxide/indium phosphide devices

US4121238A · kind A · utility

Assignee

• Bell Telephone Laboratories, Inc. · US

Inventors

• Klaus J. Bachmann · Piscataway, US
• Paul H. Schmidt · Chatham, US
• Edward Spencer · Berkeley Heights, US
• Karnamadakala Sreenivasaacharlu Sree Harsha · North Plainfield, US

Key dates

• Filing date: Feb 16, 1977
• Grant date: Oct 17, 1978
• Expiry date: Feb 16, 1997

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/12

Abstract

Devices using a transparent conductive layer of indium oxide or indium tin oxide, and a layer of a direct gap semiconductor material have been found to operate as solar cells and as light emitting devices. Exemplary of such devices is an indium tin oxide/p-InP cell which shows a 12.5% solar power conversion efficiency and also emits a red colored light when biased.