Semiconductor detector for detecting ionizing radiation
US4122345A · kind A · utility
2Cited by
3References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 2, 1977 |
| Grant date | Oct 24, 1978 |
| Priority date | — |
| Expiry date | Mar 2, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention relates to a semiconductor detector for detecting ionizing radiation. The surface barrier required for the formation of field zones in the semiconductor body (1) is created by contact between the semiconductor body (1) and an electrolyte (3) in which it is immersed. In addition, the body is cut out, in the form of a comb in the example, in such a way as to increase its active surface as much as possible. The source (8) maintains the potential difference V.sub.o between the contact (5) on the body (1) and the cathode (7). The output signal s is extracted at (6).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.