Memory storage array with restore circuit
US4122548A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 1977 |
| Grant date | Oct 24, 1978 |
| Priority date | — |
| Expiry date | Oct 7, 1997 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4113
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory storage system which utilizes semiconductor storage cells comprised of cross-coupled bipolar transistors arranged in a memory system array with an error reference circuit and a standby reference circuit that is controlled by a clock signal. The standby reference circuit and the error reference circuit are both coupled to the bit lines and selectively control a restore circuit that maintains, in the standby state, a selected potential on the bit lines such that short access times are realized and current is prevented from flowing into unselected cells when adjacent defective cells are being read or written.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.