Patent · US Expired

Memory storage array with restore circuit

US4122548A · kind A · utility

7Cited by
1References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 7, 1977
Grant dateOct 24, 1978
Priority date
Expiry dateOct 7, 1997

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/4113
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory storage system which utilizes semiconductor storage cells comprised of cross-coupled bipolar transistors arranged in a memory system array with an error reference circuit and a standby reference circuit that is controlled by a clock signal. The standby reference circuit and the error reference circuit are both coupled to the bit lines and selectively control a restore circuit that maintains, in the standby state, a selected potential on the bit lines such that short access times are realized and current is prevented from flowing into unselected cells when adjacent defective cells are being read or written.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.