Mercury chalcogenide contact for semiconductor devices
US4123295A · kind A · utility
5Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 14, 1977 |
| Grant date | Oct 31, 1978 |
| Priority date | — |
| Expiry date | Jan 14, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/443
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved contact material for use in the fabrication of semiconductor devices is provided. This material comprises one of the mercury chalcogenides. The application of this material to a nondegenerate semiconductor may be made by the process of evaporation. The resulting contact is stable in the atmosphere, and is more electronegative than the best contact material, namely gold, that is now used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.