High speed IFGET sense amplifier/latch
US4123799A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 19, 1977 |
| Grant date | Oct 31, 1978 |
| Priority date | — |
| Expiry date | Sep 19, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K3/35606
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Disclosed is a latching type sense amplifier to be used with a static IFGET random access memory which provides an improved memory circuit. The sense amplifier employs a pair of depletion mode devices which serve both as load devices for the latch and as means for coupling a pair of bit lines to the sense amplifier. Prior to sensing, both the bit lines and the switching nodes of the latch are precharged and balanced. The selection of a memory cell induces a small differential voltage across the bit lines, causing one of the depletion mode load devices to be more conductive than the other. When the latch is enabled, regenerative amplification causes the latch to seek one of two stable states as determined by the relative conductivities of the two depletion mode load devices, thereby latching the state of the data stored in the selected memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.