Method of making high voltage semiconductor structure
US4125415A · kind A · utility
7Cited by
5References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 9, 1977 |
| Grant date | Nov 14, 1978 |
| Priority date | — |
| Expiry date | May 9, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/105
Abstract
A semiconductor p-n junction structure with improved blocking voltage capability. The improvement results from the addition of a doped layer with limited total doping to the main p-n junction. Such a structure is suitable for diodes, transistors, thyristors and the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.