Magnesium doping of AlGaAs
US4126930A · kind A · utility
12Cited by
4References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 7, 1977 |
| Grant date | Nov 28, 1978 |
| Priority date | — |
| Expiry date | Nov 7, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/912
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aluminum gallium arsenide is used as a transparent, conducting contact layer on the exposed surface of a gallium arsenide photovoltaic cell. Increased conductivity for the high current generated when concentrated solar radiation strikes the cell, is provided by doping the AlGaAs layer with magnesium. During the formation of the layer, Mg diffuses into the gallium arsenide to form a p-type layer and a p-n junction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.