Pattern-forming materials having a radiation sensitive chalcogenide layer and a method of forming patterns with such materials
US4127414A · kind A · utility
19Cited by
1References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1977 |
| Grant date | Nov 28, 1978 |
| Priority date | — |
| Expiry date | Jun 8, 1997 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0044
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A pattern-forming material comprises a substrate and a radiation sensitive chalcogenide layer disposed thereon. The radiation sensitive chalcogenide layer consists of an amorphous layer having a chemical composition of 75 to 95 mol% of selenium and 5 to 25 mol% of germanium and a silver layer superimposed thereon. The pattern-forming materials having the radiation sensitive chalcogenide layer of the invention are particularly useful in lithographic applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.