Integrated circuit subsurface zener diode
US4127859A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 25, 1977 |
| Grant date | Nov 28, 1978 |
| Priority date | — |
| Expiry date | Feb 25, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/761
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A zener diode is incorporated into a conventional integrated circuit without changing the process. The structure employed produces a diode that breaks down in a subsurface region, thus avoiding the noise and instabilities that attend surface breakdown. An isolation diffusion is employed to make the anode and an NPN transistor emitter diffusion is employed to provide the cathode. If the emitter diffusion diameter is larger than the oxide cut used to achieve isolation predeposition and is concentric therewith, the resulting zener diode will have its breakdown region confined to under the emitter diffusion. The diode action is thereby remote from surface junction breakdown effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.