Platinum film resistor device
US4129848A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 1977 |
| Grant date | Dec 12, 1978 |
| Priority date | — |
| Expiry date | Jul 5, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01C17/12
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A platinum film resistor device and method for making the same. A layer of quartz, deposited upon an insulative substrate preferably silicon, is sputter etched at high power levels to produce etch pits in the surface thereof. A layer of platinum is then deposited over the quartz layer by first sputtering platinum at high power for a relatively short period of time and then completing the layer by continuing to sputter deposit platinum at a lower power. A second layer of quartz is deposited over the layer of platinum and the second layer of quartz masked and chemically etched away in the regions where portions of the platinum layer are to be removed. The exposed platinum and a portion of the second quartz layer are then sputter etched away leaving the platinum in a predetermined configuration. The platinum is then annealed, the second quartz layer removed above the lead bonding pads, and external leads attached. The device is particularly useful in temperature measuring application.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.