RF sputtering apparatus having floating anode shield
US4131533A · kind A · utility
44Cited by
5References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1977 |
| Grant date | Dec 26, 1978 |
| Priority date | — |
| Expiry date | Dec 30, 1997 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/34
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Isolating the anode shield of RF sputtering apparatus from the ground potential reduces the grounded surfaces to which the plasma is exposed and thereby increases the impedance between the plasma and the grounded surfaces. This improvement increases the resputtering rate significantly before the operating point of instability in the system is reached.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.