Patent · US Expired

RF sputtering apparatus having floating anode shield

US4131533A · kind A · utility

44Cited by
5References
16Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 30, 1977
Grant dateDec 26, 1978
Priority date
Expiry dateDec 30, 1997

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C14/34
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

Isolating the anode shield of RF sputtering apparatus from the ground potential reduces the grounded surfaces to which the plasma is exposed and thereby increases the impedance between the plasma and the grounded surfaces. This improvement increases the resputtering rate significantly before the operating point of instability in the system is reached.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.