Patent · US Expired

Capacitor dielectric with inner blocking layers and method for producing the same

US4131903A · kind A · utility

8Cited by

6References

3Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Helmut Schmelz · Prien am Chiemsee, DE
Werner Schwaen · Munich, DE

Key dates

Filing date	Jul 14, 1977
Grant date	Dec 26, 1978
Priority date	—
Expiry date	Jul 14, 1997

Classification

Technology area (CPC H)Electricity
CPC primaryH01G4/1281
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A capacitor dielectric with inner blocking layers is disclosed wherein the portion of copper located in intermediate layers between the crystallites is enriched toward the crystallite surfaces. The dielectric is produced by a heating speed of 200 to 800.degree. C/h towards a sinter temperature, and a cooling-off speed of 10 to 100.degree. C/h to about 350.degree. C below the sinter temperature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.