Patent · US Expired

Method of making a high-intensity solid-state solar cell

US4131984A · kind A · utility

20Cited by
5References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 13, 1977
Grant dateJan 2, 1979
Priority date
Expiry dateMay 13, 1997

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02E10/547

Abstract

A semiconductor solar cell capable of converting incident radiation to electrical energy at high efficiency includes a plurality of series-connected unit solar cells formed on a common wafer of semiconductor material. The unit solar cells each include a semiconductor substrate of one conductivity type and a p-n junction formed in the substrate. The light-receiving surface of the cell may have an opaque member thereon, and incident light may be directed onto the portion of that surface not covered by the opaque member. Various embodiments and methods illustrate the invention.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.