Thin silicon devices
US4131985A · kind A · utility
66Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 1977 |
| Grant date | Jan 2, 1979 |
| Priority date | — |
| Expiry date | Jun 24, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This relates to a semiconductor device and method for making same. At least one semiconductor device is formed in a polished silicon slice, and the device is framed by a deep diffusion of boron. The surface of the slice is then coated with a layer of silicon nitride, and a glass ceramic body is bonded to the silicon nitride layer. The device is next isolated by isotropic etching, and the silicon from beneath the device is removed with a selective etch so that metal interconnections can be made to the underside of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.