Process for the production of pure, silicon elemental semiconductor material

US4132763A · kind A · utility

Assignee

• Wacker Chemie AG · DE

Inventors

• Dietrich Schmidt · Camp Hill, US
• Johann Hofer · Grettstadt, DE
• Karl Huber · Bischofswerda, DE

Key dates

• Filing date: Jun 29, 1977
• Grant date: Jan 2, 1979
• Expiry date: Jun 29, 1997

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B01J2208/00203
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

An improved process for the production of pure, elemental semiconductor material, especially silicon, of the type wherein the semiconductor material is produced by decomposition from the gaseous phase, is provided, which includes the initial step of maintaining a melt of the semiconductor material at a temperature of up to a maximum of 200.degree. C above the melting point of the material. Thereafter, at least a gaseous, decomposable compound of the semiconductor material is introduced into the melt, under a pressure of about 0.01 to 30 bar, to produce a pure, elemental semiconductor material in liquid form.