Semiconductor devices
US4132999A · kind A · utility
23Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 1, 1976 |
| Grant date | Jan 2, 1979 |
| Priority date | — |
| Expiry date | Dec 1, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/1237
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a substrate made of an alloy having the formula Cd.sub.x Hg.sub.1-x Te where x is a non-zero number less than 1. The substrate has P type conductivity and a doping agent such as mercury is diffused into the substrate to form a region of N type conductivity therein. Before diffusion of the mercury into the substrate, a protective layer of cadmium telluride CdTe is applied to the surface of the substrate and the doping agent is diffused into the substrate through the protective layer. The device finds application as a photovoltaic detector of infrared radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.