Glass composition for passivating semiconductor surfaces
US4133690A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 19, 1976 |
| Grant date | Jan 9, 1979 |
| Priority date | — |
| Expiry date | Apr 19, 1996 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Glass compositions useful for passivating silicon semiconductor elements or bodies and to semiconductor elements or bodies coated by such glass compositions. The glass compositions are applied onto the surface of the semiconductor in the form of a finely ground powder and thereafter fused on at least a portion of the semiconductor element. The compositions comprise: (A) glass and (B) powdered cordierite in an amount effective to provide a coefficient of thermal expansion of up to 40 .times. 10.sup.-7 /.degree. C for said composition within the temperature range of 20.degree.-300.degree. C. The compositions are compatible with the thermal expansion of the silicon semiconductor and capable of adhering to the silicon in layers greater than 10 .mu.m without the formation of cracks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.