Ion-sensitive electrode and processes for making the same
US4133735A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1977 |
| Grant date | Jan 9, 1979 |
| Priority date | — |
| Expiry date | Sep 27, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49002
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An improved ion-sensitive electrode is described, particularly in terms of the structure of a pH electrode and first and second processes for making the same. The pH electrode includes a substrate, preferably of forsterite, which is configured as a wafer having a substantially planar wafer surface. A continuous conducting layer, formed by either thin-film vapor deposition or thick-film screening processes, is formed on the substantially planar wafer surface in a desired configuration. A first region of the continuous conducting layer, and contiguous portions of the substantially planar wafer surface, are covered by a continuous membrane layer preferably composed of a pH-sensitive glass such as Corning Code 0150 glass. Typically, the membrane layer is formed by a thick-film process which involves the reduction of the glass to a fine powder, the mixing of the powder with an organic vehicle including an organic solvent and an organic binder to form a glass paste, and the application of the glass paste to the wafer through a wire mesh screen having an open region therethrough corresponding in configuration to that of the desired membrane layer. The paste when applied to the wafer is fu…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.