Method of attacking a thin film by decomposition of a gas in a plasma
US4134817A · kind A · utility
24Cited by
5References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 10, 1978 |
| Grant date | Jan 16, 1979 |
| Priority date | — |
| Expiry date | Jan 10, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3341
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In the manufacture of electronic components, a thin film is attacked by decomposition of a gas in a plasma. The thin film is mounted on a substrate which is RF biased with respect to the plasma thereby attracting fluorine ions for example which carry out the attack. This speeds the rate of attack and improves the definition of attacked portions of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.