Sputtering target fabrication method
US4135286A · kind A · utility
42Cited by
5References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1977 |
| Grant date | Jan 23, 1979 |
| Priority date | — |
| Expiry date | Dec 22, 1997 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method for producing a cooled sputtering target assembly is described. The resultant target is also described. The material to be sputtered is provided in the form of powder which is hot isostatically pressed in a toroidal metallic container under conditions which promote compaction and bonding of the powder particles to form a fully dense material. The container is then partially removed from the target material except for a remnant around the outer surface. A cooling jacket is then fabricated and attached to the remnant of the container.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.