Integrated circuit contact and method for fabricating the same
US4135292A · kind A · utility
8Cited by
4References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 6, 1976 |
| Grant date | Jan 23, 1979 |
| Priority date | — |
| Expiry date | Jul 6, 1996 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28512
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit aluminum-silicon electrical contact may be fabricated in a diffusion region formed in a monocrystalline silicon semiconductor layer by converting the upper portion of the diffusion region into an amorphous region. Alloy pitting is substantially decreased since the solubility of silicon in aluminum is highly dependent upon crystallographic orientation of the silicon and decreases as the silicon approaches an amorphous form. The amorphous region may be formed by implanting arsenic ions with an energy of at least 180 keV and a dosage of approximately 10.sup.15 ions/cm.sup.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.