Method of manufacturing a semiconductor device
US4137122A · kind A · utility
1Cited by
10References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 11, 1977 |
| Grant date | Jan 30, 1979 |
| Priority date | — |
| Expiry date | May 11, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/162
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method of manufacturing a semiconductor device in which a compound consisting of at least two semiconductor materials and having an energy gap which is smaller than that of a substrate is deposited epitaxially on the substrate. According to the invention, the composition of the mixture is determined during the deposition by means of measurement of the thermal emission.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.