Method of producing optoelectronic devices with control of light propagation by proton bombardment
US4138274A · kind A · utility
7Cited by
8References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 26, 1978 |
| Grant date | Feb 6, 1979 |
| Priority date | — |
| Expiry date | Apr 26, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/084
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an optoelectronic device, light is restrained from propagating in one or both confining layers on either side of an active layer by forming one or more photon absorbing barriers in one, or both, confining layers. A photon absorbing barrier can be formed by proton bombardment of a confining layer, by producing a protrusion from the substrate into the adjacent confining layer, or by producing a protrusion from a capping layer into the other confining layer, or by combinations of these. Spaced apart barriers can define a device, or sections of a multisectioned device, for example a monolithic light emitting diode and modulator.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.