High temperature electronic gain device
US4138622A · kind A · utility
7Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 4, 1977 |
| Grant date | Feb 6, 1979 |
| Priority date | — |
| Expiry date | Aug 4, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J21/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An integrated thermionic device suitable for use in high temperature, high radiation environments. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.