Plasma discharge ion source
US4139772A · kind A · utility
6Cited by
8References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 8, 1977 |
| Grant date | Feb 13, 1979 |
| Priority date | — |
| Expiry date | Aug 8, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J27/14
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source is described in which a compound of the material of a desired ion is dissociated in a plasma discharge process to provide a beam of charged particles including the desired ions. The proportion of the desired ion in the particle beam is selected by adjustment of the temperature of the plasma, and, for increasing the range of selection of obtainable proportions, various means are described for increasing the plasma temperature beyond that which was previously attainable in ion sources of this type.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.