High speed sense circuit for semiconductor memories
US4139911A · kind A · utility
45Cited by
1References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 13, 1978 |
| Grant date | Feb 13, 1979 |
| Priority date | — |
| Expiry date | Mar 13, 1998 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A high speed sensing circuit is described incorporating a number of field effect transistors for sensing, amplifying and storing a signal indicative of the polarity of the difference voltage across two load elements. The load elements may be a pair of variable threshold transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.