Solid state image sensing device
US4141024A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 2, 1978 |
| Grant date | Feb 20, 1979 |
| Priority date | — |
| Expiry date | May 2, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/153
Abstract
A solid state image sensing device having a semiconductor substrate, an insulating layer disposed on one major surface of the substrate, plural channel stopper regions formed in the substrate in faced relation to the major surface of the substrate, each channel stopper region being extended in the column direction with a distance between adjacent ones and plural sets of electrodes disposed over the insulating layer, each set including a pair of electrode members, each electrode member being extended in the row direction, in which a window portion is formed in the pair of electrode members at one side of the distance between adjacent channel stopper regions and the width of the window portion in the column direction is selected more than a predetermined value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.