Method of fabricating semiconductor devices with a low thermal resistance and devices obtained by the method
US4141136A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 1977 |
| Grant date | Feb 27, 1979 |
| Priority date | — |
| Expiry date | Feb 8, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/30107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating highly miniaturized semiconductor devices which must be electrically but not thermally insulated from ground, by replacing the conventional disk of beryllium oxide with a portion of the substrate itself so as to decrease the thermal resistance. To this end one starts with a disk of "PIN"-structure silicon. On one of its faces (P or N as the case may be) one deposits by epitaxy, or forms by successive diffusions, the active layers of the device and the surdoped zones. The "PIN" diode may be reverse biased if it is desired to create a capacity between active layers and metallic support serving as heat sink. Diodes and transistors in high-frequency microelectronics obtained by the method are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.