Process for the manufacture of silicon of large surface area bonded to a substrate and silicon-bonded substrates so made

US4141764A · kind A · utility

Assignee

• Wacker-Chemitronic Gesellschaft fur Elektronik Grundstoffe mbH · DE

Inventors

• Bernhard Authier · Burghausen, DE
• Heinz-Jorg Rath · Burghausen, DE
• Dietrich Schmidt · Camp Hill, US
• Johann Hofer · Grettstadt, DE

Key dates

• Filing date: Oct 11, 1977
• Grant date: Feb 27, 1979
• Expiry date: Oct 11, 1997

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C30B29/60
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Process for the manufacture of silicon of large surface area bonded to a substrate, which comprises depositing silicon to a thickness of from 30 to 500 .mu.m onto panel-shaped substrates of glassy carbon (a glass-like carbon obtained by carbonizing a spatially cross-linked synthetic resin) that are heated by direct passage of an electric current to temperatures above the melting point of silicon, and thereafter cooling the silicon to a temperature below its melting point in the direction from its free surface toward the substrate. The invention also comprises the silicon panels so made which are especially useful in the manufacture of solar cells.