Hetero-structure injection laser
US4142160A · kind A · utility
11Cited by
2References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 10, 1975 |
| Grant date | Feb 27, 1979 |
| Priority date | — |
| Expiry date | Sep 10, 1995 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/80
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser having a structure such that a narrow strip mesa is formed above a laser active layer in a hetero-structure crystal so that it can generate a laser beam of improved optical property.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.