Semiconductor photodiodes

US4142200A · kind A · utility

Assignee

• NIPPON TELEGRAPH AND TELEPHONE CORPORATION · JP

Inventors

• Yoshihiko Mizushima · Fuchu, JP
• Kenji Kajiyama · Kodaira, JP
• Tatsuya Kimura · Tokyo, JP
• Hiroshi Kanbe · Nishitokyo, JP

Key dates

• Filing date: Oct 20, 1976
• Grant date: Feb 27, 1979
• Expiry date: Oct 20, 1996

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/225

Abstract

The impurity concentration distribution of the layers of a multilayer junction diode is varied such that the concentration in a first region contiguous to the junction is low, in a second region is high, in a third region is low and in a last region gradually increases in the direction away from the junction.