Conductor-access, magnetic bubble memory
US4142249A · kind A · utility
1Cited by
1References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 6, 1977 |
| Grant date | Feb 27, 1979 |
| Priority date | — |
| Expiry date | Dec 6, 1997 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/0841
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A low power, conductor-access, bubble memory is realized with a single level of metallization for providing the requisite propagation fields. Sets of apertures in the conducting layer define bubble paths, and permalloy elements aligned with the apertures overlie the conducting layer at end portions and contact the exposed bubble layer at midportions. Current flow is established transverse to the bubble paths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.