Method and device for detecting radiatons

US4143266A · kind A · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Joseph Borel · Échirolles, FR
• Vincent Le Goascoz · Le Pont-de-Claix, FR

Key dates

• Filing date: Apr 26, 1978
• Grant date: Mar 6, 1979
• Expiry date: Apr 26, 1998

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/282

Abstract

The method consists in fabricating an MOS transistor comprising a drain region and a source region separated from each other by a bulk region of opposite doping type relative to the first two regions, in delivering the radiation to be detected into the carrier-collection region of the MOS transistor, in leaving the bulk region at a floating potential and in collecting the drain-source current of the transistor.