Manufacture of an I.sup.2 device utilizing staged selective diffusion thru a polycrystalline mask
US4144106A · kind A · utility
7Cited by
8References
6Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 29, 1977 |
| Grant date | Mar 13, 1979 |
| Priority date | — |
| Expiry date | Jul 29, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
During the manufacture of an I.sup.2 L device, to achieve diffusion steps for a collector region and a collar region at the same time, polycrystal silicon is deposited over the whole surface of the collector region and then an impurity is diffused simultaneously into the collector region and the collar region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.