Method for encapsulating a semiconductor diode
US4146655A · kind A · utility
6Cited by
7References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1978 |
| Grant date | Mar 27, 1979 |
| Priority date | — |
| Expiry date | Jun 26, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An improved method for encapsulating a semiconductor diode wherein a semiconductor chip and a pair of leads are surrounded by an insulating glass. The improvement comprising the providing of an alkaline free low temperature encapsulating glass for semiconductors consisting essentially of 11-15 weight percent silica, 7-11 weight percent alumina, 63-68 weight percent lead oxide, 4-10 weight percent lead fluoride and 5-10 weight percent borate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.