Irreversible semiconductor switching element and semiconductor memory device utilizing the same
US4146902A · kind A · utility
147Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 20, 1978 |
| Grant date | Mar 27, 1979 |
| Priority date | — |
| Expiry date | Jun 20, 1998 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor switching element comprised by a high resistivity polycrystalline silicon resistor whose resistance irreversibly decreases to a small value at a threshold voltage upon the voltage across the resistor reaching the threshold voltage. A semiconductor memory device is constituted by using the switching element as a memory cell and a semiconductor gate element for controlling the current flowing through the semiconductor switching element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.