Method for forming p-n junctions and solar-cells by laser-beam processing
US4147563A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 1978 |
| Grant date | Apr 3, 1979 |
| Priority date | — |
| Expiry date | Aug 9, 1998 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/153
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.