Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
US4147571A · kind A · utility
92Cited by
6References
28Claims
0Family size
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Key dates
| Filing date | Jul 11, 1977 |
| Grant date | Apr 3, 1979 |
| Priority date | — |
| Expiry date | Jul 11, 1997 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/11
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process is provided for the VPE growth of III/V compounds such as Al.sub.x Ga.sub.1-x As in which the group III elements are transported into the reaction zone in the form of organometallic compounds in the presence of a gaseous halogen or hydrogen halide such as hydrogen chloride (HCl).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.