Photoconductor for GaAs laser addressed devices

US4147667A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Jacques Chevallier · Maurepas, FR
• Charles R. Guarnieri · Somers, US
• Aare Onton · Saratoga, US
• Harold Wieder · Saratoga, US

Key dates

• Filing date: Jan 13, 1978
• Grant date: Apr 3, 1979
• Expiry date: Jan 13, 1998

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

An improved photoconductor for GaAs laser addressed devices sensitive to illumination at about 1.5 eV is an amorphous material containing silicon, hydrogen and a material taken from the group consisting of Ge, Sn and Pb. A preferred embodiment of this invention is amorphous Si.sub.x Ge.sub.1-x H.sub.y where x equals 0.78 to 0.93 and y equals 14-20 atomic percent.