Solid-state device for detecting and locating the points of impact of ionizing radiation
US4147933A · kind A · utility
8Cited by
3References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 10, 1977 |
| Grant date | Apr 3, 1979 |
| Priority date | — |
| Expiry date | May 10, 1997 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/2928
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A semiconductor body contains microscopic passages in which multiplication of the free electrons appearing at the entrances to said passages, under the effect of the incident (arrow) ionizing radiation, takes place. In the drawing, the reference 2 signifies the conductive film forming a surface barrier in conjunction with the semiconductor body which is endowed with the property of secondary emission with an emission coefficient better than unity; V.sub.o signifies the voltage applied to the terminals of said barrier; 5 and 6 designate the electron collector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.