Patent · US Expired

Semiconductor apparatus

US4148047A · kind A · utility

44Cited by
2References
65Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 16, 1978
Grant dateApr 3, 1979
Priority date
Expiry dateJan 16, 1998

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D64/519

Abstract

A field-effect transistor device is provided having a relatively low "on" condition resistance between the source and drain terminals thereof by virtue of the geometrical design used.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.