Method of making camera tube target by modifying Schottky barrier heights
US4149907A · kind A · utility
7Cited by
8References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1977 |
| Grant date | Apr 17, 1979 |
| Priority date | — |
| Expiry date | Sep 16, 1997 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A photoconductor body for a camera tube includes a semiconductor body including an overlayer of a material selected from a granular metal-insulator system. Suitable semiconductor materials are limited to those materials capable of providing Schottky barrier heights in excess of 0.9 eV. when fabricated with such overlayers and those having bandgaps greater than about 1.4 eV. A method of fabricating such photoconductive bodies is disclosed wherein a cadmium selenide semiconductor material is thermally treated to modify the Schottky barrier heights to a desired value in excess of about 0.9 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.